1 publication date: october 2004 sjh00095aed transistors with built-in resistor UNR31A7 silicon pnp epitaxial planar type for digital circuits features ? suitable for high-density mounting downsizing of the equipment ? contribute to low power consumption absolute maximum ratings t a = 25 c unit: mm internal connection marking symbol: cp parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v collector-base cutoff current (emitter open) i cbo v cb = ? 50 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 50 v, i b = 0 ? 0.5 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 0.01 ma forward current transfer ratio h fe v ce = ? 10 v, i c = ? 5 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v output voltage high-level v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v output voltage low-level v ol v cc = ? 5 v, v b = ? 2.5 v, r l = 1 k ?? 0.2 v input resistance r 1 ? 30% 22 + 30% k ? transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz electrical characteristics t a = 25 c 3 c 1.20 0.05 0.52 0.03 0 to 0.01 0.15 max. 5 0.15 min. 0.80 0.05 0.15 min. 0.33 (0.40) (0.40) 12 3 5 0.80 0.05 1.20 0.05 +0.05 ?0.02 0.10 +0.05 ?0.02 0.23 +0.05 ?0.02 b r 1 (22 k ?) c e 1: base 2: emitter 3: collector sssmini3-f1 package parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 50 v collector-emitter voltage (base open) v ceo ? 50 v collector current i c ? 80 ma total power dissipation p t 100 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
UNR31A7 2 sjh00095aed p t ? t a i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o total power dissipation p t (mw) ambient temperature t a ( c ) 0 40 80 120 0 20 40 60 80 100 120 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 160 ? 100 ? 120 ? 140 ? 80 ? 60 ? 40 ? 20 t a = 25 c ? 0. 9 ma ? 0. 8 ma ? 0. 7 ma ? 0. 6 ma ? 0. 5 ma ? 0. 4 ma ? 0. 3 ma ? 0. 2 ma ? 0. 1 ma collector-emitter voltage v ce ( v ) collector current i c (m a ) i b = ? 1.0 ma collector current i c ( ma ) collector-emitter saturation voltage v ce(sat) ( v ) t a = 85 c i c / i b = 10 ? 0.01 ? 0.1 ? 0.1 ? 1 ? 1 ? 10 ? 100 25 c ? 25 c collector current i c ( ma ) forward current transfer ratio h fe 0 500 400 300 200 100 i c / i b = 10 ? 1 ? 10 ? 100 ? 1 000 t a = 85 c 25 c ? 25 c collector-base voltage v cb (v) collector output capacitance (common base, input open circuited) c ob (pf) 0 ? 40 ? 10 ? 30 ? 20 f = 1 mhz t a = 25 c 10 1 input voltage v in ( v ) output current i o ( ma ) 0 ? 100 ? 0.5 ? 1 ? 1.5 ? 2 ? 2.5 v o = ? 5 v t a = 25 c ? 0.01 ? 0.1 ? 1 ? 10 output current i o ( ma ) input voltage v in ( v ) ? 0.01 ? 0.1 ? 10 ? 1 ? 100 ? 0.1 ? 100 ? 10 ? 1 v o = ? 0.2 v t a = 25 c
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